NTMFS4C028NT1G MOSFET Power Electronics
Product Description:
The NTMFS4C028NT1G is a power MOSFET transistor that is designed for use in power electronics and converters. This device is built with the latest MOSFET technology and offers high performance and low on-state resistance for superior power efficiency. It also features a low gate-to-source voltage threshold and excellent avalanche ruggedness for robust operation.
Features:
• Low On-State Resistance (RDS(on))
• High Avalanche Ruggedness
• Low Gate-to-Source Voltage Threshold
• High Performance MOSFET Technology
• Wide Operating Temperature Range
Specifications:
• Drain-Source Voltage (VDS): 30V
• Continuous Drain Current (ID): 4A
• On-State Resistance (RDS(on)): 0.0080 Ω
• Gate-to-Source Voltage (VGS): -20V to +20V
• Maximum Power Dissipation (PD): 1.6W
• Operating Temperature Range: -55°C to +175°C
| Product Status | | |
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | | |
| Base Product Number | |
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NTMFS4C028NT1G Mosfet In Power Electronics 30V 4A N-Channel 0.028 Ohm TO-252-3 Images
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