SIHP22N60E-GE3 MOSFET Power Electronics High Performance High Efficiency Switching Solutions
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Package / Case | | |
| Base Product Number | |
Product Description:
The SIHP22N60E-GE3 is a 600V N-Channel Enhanced MOSFET designed to deliver high performance in power electronic applications. The device is designed utilizing the latest in advanced packaging and process technologies, to provide superior switching performance and low on-resistance. This MOSFET features a low gate charge and fast body diode for improved efficiency and switching performance.
Features:
• Low On-Resistance: RDS(on) = 0.048Ω
• Low Gate Charge: Qg = 4.4nC
• Fast Body Diode
• High Power Density
• Enhanced Ruggedness
• Avalanche Rated
• RoHS Compliant
Applications:
• Switch-Mode Power Supplies
• Uninterruptible Power Supplies
• Automotive Inverters
• Motor Drives
• AC-DC and DC-DC Converters
Why buy from us >>> Fast / Safely / Conveniently
• SKL is a Stock keeper and trade company of Electronic components .Our branches office include China, Hong Kong, Sigapore , Canada . Offer business, service, resourcing and information for our global member.
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How to buy >>>
• Contact us by email & sent your inquire with your Transport destination .
• Online chat, the commissioner would be responded ASAP.
Service >>>
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