IRGB4061DPBF MOSFET
High Performance Power Electronics Solution for Reliable Performance
Product Description:
The IRGB4061DPBF is a N-Channel MOSFET designed for use in power management applications. This MOSFET features a low on-resistance, low gate charge, low input capacitance, and a low input capacitance.
Product Parameters:
• Drain-Source Voltage (VDS): 20V
• Drain-Source On-State Resistance (RDS(on)): 0.0035 ohm
• Gate-Source Voltage (VGS): 10V
• Continuous Drain Current (ID): 30A
• Pulsed Drain Current (IDP): 75A
• Maximum Power Dissipation (PD): 115W
• Operating Temperature (Tj): -55°C to 175°C
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