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Brand Name : Infineon Technologies
Model Number : IRF640NSTRLPBF
Place of Origin : Multi-origin
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 99999
Delivery Time : 1-7days
Packaging Details : Standard
Product Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200 V
Current - Continuous Drain (Id) @ 25°C : 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Product description list for IRF640NSTRLPBF:
The IRF640NSTRLPBF MOSFET transistor is a high-performance N channel device with a voltage rating of 200 V and a maximum current rating of 18 A. It features a low on-resistance of 0.077 ohm and is available in a TO-220AB package.
The IRF640NSTRLPBF MOSFET transistor is also available in a TO-263AB package. This package offers a higher power dissipation capability and improved thermal performance compared to the TO-220AB package.
For applications that require a smaller footprint, the IRF640NSTRLPBF MOSFET transistor is also available in a D2PAK package. This package offers a compact and low-profile solution that is suitable for space-constrained applications.
The IRF640NSTRLPBF MOSFET transistor is also available in a TO-262 package. This package is similar in size to the TO-220AB package but offers a different pinout configuration that may be better suited for certain applications.
Finally, the IRF640NSTRLPBF MOSFET transistor is available in a TO-220FP package. This package offers a full-pack configuration with a metal tab that provides improved thermal performance and easier mounting to a heatsink.
Note: These descriptions are meant to provide general information about the different package options available for the IRF640NSTRLPBF MOSFET transistor. Actual performance specifications may vary depending on the specific manufacturer and package selected.
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