IRF5803TRPBF MOSFET
High Power High Efficiency Power Electronics Solution
Parameters:
• Package: TO-220
• Technology: N-Channel
• Polarity: Enhancement type
• Drain-Source Voltage (Vds): 100 V
• Gate-Source Voltage (Vgs): 10 V
• Continuous Drain Current (Id): 8 A
• Drain-Source On-State Resistance (Rds): 0.06 ohm
• Maximum Junction Temperature (Tj): 150°C
• Power Dissipation (Pd): 14 W
• Mounting Type: Through Hole
• Number of Elements: 1
• Operating Temperature: -55°C to 150°C
• Fall Time (tf): 0.1 us
• Rise Time (tr): 0.1 us
• Drain-Source Capacitance (Cd): -
• Brand: IRF
Why buy from us >>> Fast / Safely / Conveniently
• SKL is a Stock keeper and trade company of Electronic components .Our branches office include China, Hong Kong, Sigapore , Canada . Offer business, service, resourcing and information for our global member.
• Goods are ensured the highest quality possible and are delivered to our customers all over the world with speed and precision.
How to buy >>>
• Contact us by email & sent your inquire with your Transport destination .
• Online chat, the commissioner would be responded ASAP.
Service >>>
• Forwarder Shipment to world-wide, DHL ,TNT ,UPS,FEDEX etc. buyer don`t need to worry about shipping problem
• We will try to respond as quickly as possible. But due to time zone difference, please allow up to 24 hours to get your mail replied. The products were tested by some devices or software, we ensure that there is no quality problems.
• We are committed to providing fast, convenient and safe transportation service to global buyer.
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IRF5803TRPBF MOSFET High Power High Efficiency Power Electronics Solution Images
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